Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
نویسندگان
چکیده
منابع مشابه
Atomic Layer Deposition of Aluminum Oxide
I Acknowledgements II Dedication III List of Figures V
متن کاملPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Please cite the original version: Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issu...
متن کاملCompetition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride.
The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibra...
متن کاملAtomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications
Praseodymium aluminum oxide (PAO) thin films were grown by atomic layer deposition (ALD) from a new precursor, tris(N,N′-diisopropylacetamidinato) praseodymium, (Pr(amd)3), trimethylaluminum (TMA), and water. Smooth, amorphous films having varying compositions of the general formula PrxAl2–xO3 were deposited on HF-last silicon and analyzed for physical and electrical characteristics. The films ...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4998577